Re: [802.15_GENERAL] new THz guest speaker notice

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Dear Members,

I would like to announce that we are fortunate to also have Dr. Jae-Sung Rieh, Associate Professor with the School of Electrical Engineering, Korea, Seoul, Korea presenting at the 802.15 IGTHz Wednesday July 16^th 8-10am morning secession.

Dr. Jae-Sung Rieh will be providing a presentation on the exciting work being conducted by his researchers in the emerging area of semiconductor technologies and circuits for THz applications. This work focuses on front-end transistor based circuitry only now reaching the speeds needed for THz applications, and which could lead to the beginnings of low cost, small scale THz circuitry critical for handheld and mass production requirements. Please join us for an exciting and very full Wednesday morning.

Please see below Dr. Jae-Sung Rieh’s presentation abstract and his bio.

David Britz

Vice Chair IG THz

Title:

A brief overview of the current status of semiconductor technologies and circuits for THz applications

Abstract:

Terahertz frequency band is attracting growing interests these days for various applications, including the wideband communication application. The front-end of the system that serves as the receiver and transmitter needs to handle extremely high frequency, i.e. terahertz frequency, and it has traditionally relied on optics-based methods or diode-based electronic methods. However, with the recent surge of transistor operation speed that reaches several hundred GHz, it now appears feasible to implement the front-end based on transistor-based electronic approaches, which are expected to provide better performance than the diode-based approaches and better compatibility with remaining electronics than the optics-based approaches. In this presentation, a brief overview of the current status of high speed semiconductor transistor technologies that can be considered for terahertz applications will be provided, along with selected circuit examples based on such technologies.

Presenter Bio:

Jae-Sung Rieh received the B.S. and M.S. degrees in electronics engineering from Seoul National University, Seoul, Korea, in 1991 and 1995, respectively, and the Ph.D. degree in electrical engineering from the University of Michigan, Ann Arbor, MI, USA, in 1999.

In 1999, he joined IBM Semiconductor R & D Center, where he was responsible for the research and development activities for the 200 GHz and 350 GHz SiGe HBT technologies. Since 2004, he has been with the School of Electrical Engineering, Korea University, Seoul, Korea, where he is currently an associate professor. His major interest lies in the Si-based RF devices and their application to mm-wave and terahertz circuits.

Dr. Rieh is a co-recipient of 2002 and 2006 IEEE EDS George E. Smith Awards. He served as the Conference Chair for 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, and is currently serving as an Associate Editor of the IEEE Microwave and Wireless Components Letters.