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Surge Protective Devices Committee
SPDC Terms R

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SPDC Terms R

RADIO INFLUENCE VOLTAGE (RIV)
A high-frequency voltage, generated by all sources of ionization current, that appears at the terminals of electric-power apparatus or on power circuits.
[C62.1–1989 & C62.11–1987]

RATED AVERAGE POWER DISSIPATION
Maximum average power dissipation in the device due to repetitive pulses at a specified current and temperature without causing device failure.
[C62.35–1987]

RATED CONTINUOUS CURRENT
The current expressed in amperes, root mean square, that the device can carry continuously under specified service conditions without exceeding the allowable temperature rise.
[STD 32–1990]

RATED CURRENT (OF A NEUTRAL DEVICE) (CURRENT RATING)
The rated thermal current of a neutral device.
[STD 32–1990]

RATED DC VOLTAGE (VARISTOR)
Maximum continuous dc voltage which may be applied.
[C62.33–1989]

RATED FORWARD SURGE CURRENT
Maximum single peak current for an 8.3 ms, half sine wave, without causing device failure. Applies to asymmetrical bi-directional avalanche junction surge suppressors only.
[C62.35–1987]

RATED FREQUENCY (OF A GROUNDING DEVICE)
The frequency of the alternating current for which a device is designed.
[STD 32–1990]

RATED MULTIPLE PEAK PULSE POWER DISSIPATION
PPPM = VC x IPPM
Peak pulse power dissipation resulting from the pulse current.
[C62.35–1993]

RATED PEAK SINGLE PULSE TRANSIENT CURRENT (VARISTOR)
Maximum peak current which may be applied for a single 8/20 Ás impulse, with rated line voltage also applied, without causing device failure.
[C62.33–1989]

RATED RECURRENT PEAK VOLTAGE (VARISTOR)
Maximum recurrent peak voltage which may be applied for a specified duty cycle and waveform.
[C62.33–1989]

RATED RMS VOLTAGE (VARISTOR)
Maximum continuous sinusoidal rms voltage which may be applied.
[C62.33–1989]

RATED SINGLE PULSE TRANSIENT ENERGY (VARISTOR)
Energy which may be dissipated for a single impulse of maximum rated current at a specified wave shape, with rated rms voltage or rated dc voltage also applied, without causing device failure.
[C62.33–1989]

RATED THERMAL CURRENT
The rms neutral current in amperes which the device is rated to carry under standard operating conditions for rated time without exceeding temperature limits.
[STD 32–1990]

RATED TIME (TIME RATING)
The time during which the device will carry its rated thermal current (or, for certain resistors, withstand its rated voltage) under standard operating conditions, without exceeding the limitations established by these standards.
[STD 32–1990]

RATED TIME TEMPERATURE RISE (FOR A GROUNDING DEVICE)
The maximum temperature rise above ambient attained by the winding of a device as the result of the flow of rated thermal current (or, for certain resistors, the maintenance of rated voltage across the terminals) under standard operating conditions, for rated time and with a starting temperature equal to the steady-state temperature. It may be expressed as an average or a hot-spot winding rise.
[STD 32–1990]

RATED TRANSIENT AVERAGE POWER DISSIPATION (VARISTOR)
Maximum average power which may be dissipated due to a group of pulses occurring within a specified isolated time period, without causing device failure.
[C62.33–1989]

RATED VOLTAGE
The rms voltage, at rated frequency, which may be impressed between the terminals of the device under standard operating conditions for rated time (continuously for grounding transformers) without exceeding the limitations established by these standards.
[STD 32–1990]

RATING
The nominal value of any electrical, thermal, mechanical, or environmental quantity assigned to define the operating conditions under which a component, machine, apparatus, electronic device, etc., is expected to give satisfactory service.
NOTE - Rating is a generic term, but also see maximum rating.
[C62.37–1996]
The designation of an operating limit for a device.
[C62.1–1989]

REACTANCE GROUNDED
Grounded through impedance, the principal element of which is reactance.
NOTE: The reactance may be inserted either directly, in the connection to ground, or indirectly by increasing the reactance of the ground return circuit. The latter may be done by intentionally increasing the zero-sequence reactance of apparatus connected to ground, or by omitting some of the possible connections from apparatus neutrals to ground.
[STD 32–1990]

RECEPTOR ELECTRODE GEOMETRY
The size and shape of that surface of the receptor, termed the receptor electrode, at which the ESD takes place.
[C62.47–1992]

RECEPTOR
The body which is at rest in an ESD event. The receptor is usually but not necessarily at the same potential as its surroundings. It is always at a potential different from that of the intruder.
[C62.47–1992]

RECOVERY VOLTAGE
That voltage that occurs across the terminals of a pole of circuit-interrupting device upon the interruption of the current.
NOTE: For an arrester, this occurs as a result of interruption of the follow current.
[C62.1–1989]

REMOTE EARTH (POTENTIAL)
The location outside the influence of local grounds, and always assumed to be at zero potential.
[C62.23 – 1995]

REPETITIVE PEAK FORWARD CURRENT
(IFRM)
Rated maximum (peak) value of ac power frequency forward current of specified waveshape and frequency which may be applied continuously.
[C62.37–1996]

REPETITIVE PEAK OFF-STATE CURRENT
 (IDRM)
The maximum (peak) value of off-state current that results from the application of the repetitive peak off-state voltage.
[C62.37–1996]

REPETITIVE PEAK OFF-STATE VOLTAGE
(VDRM)
Rated maximum (peak) continuous voltage that may be applied in the off-state conditions including all dc and repetitive alternating voltage components.
[C62.37–1996]

REPETITIVE PEAK ON-STATE CURRENT
(ITRM)
Rated maximum (peak) value of ac power frequency on-state current of specified waveshape and frequency which may be applied continuously.
[C62.37–1996]

REPETITIVE PEAK REVERSE CURRENT
(IRRM)
The maximum (peak) value of reverse current that results from the application of the repetitive peak reverse voltage, VRRM.
[C62.37–1996]

REPETITIVE PEAK REVERSE VOLTAGE (VRRM)
Rated maximum (peak) continuous voltage that may be applied in the reverse blocking direction including all dc and repetitive alternating voltage components.
[C62.37–1996]

REPETITIVE RATING
A maximum rating that may be continuously applied to the thyristor.
[C62.37–1996]

RESEAL VOLTAGE RATING OF AN ARRESTER
The maximum arrester recovery voltage permitted for a specified time following one or more unit operation(s) with discharge currents of specified magnitude and duration.
[C62.2–1987]

RESISTANCE (VARISTOR)
Static resistance of the varistor at a given operating point as defined by: Rx = dVx/dIx.
[C62.33–1989]

RESISTANCE GROUNDED
Grounded through impedance, the principal element of which is resistance.
NOTE: The resistance may be inserted either directly, in the connection to the ground, or indirectly, as, for example, in the secondary of a transformer, the primary of which is connected between neutral and ground, or in series with the delta-connected secondary of a wye-delta grounding transformer.
[STD 32–1990]

RESISTANCE METHOD OF TEMPERATURE DETERMINATION
The determination of the temperature by comparison of the resistance of a winding at the temperature to be determined, with the resistance at known temperature.
[STD 32–1990]

RESPONSE TIME (VARISTOR)
The time between the point at which the wave exceeds the clamping voltage level (VC) and the peak of the voltage overshoot. For the purpose of this definition, clamping voltage is defined with a 8/20 Ás current waveform of the same peak current amplitude as the waveform used for this response time.
[C62.33–1989]

RESPONSE TIME
The time between the point at which the wave exceeds the clamping level (VC) and the peak of the voltage overshoot.
[C62.35–1987]

REVERSE BLOCKING QUADRANT
Quadrant 3 of the principal voltage-current characteristic in which the device exhibits a reverse blocking state.
[C62.37–1996]

REVERSE DIRECTION
(1) The direction of current in a p-n junction that results when the n-type semiconductor region is at a positive potential relative to the p-type region.
(2) The direction of current in a semiconductor device that results when the n-type semiconductor region connected to one terminal is at a positive potential relative to the p-type region connected to the other terminal.
NOTE-This definition may not apply if one or more junctions are connected in series with at least one other
junction whose p and n regions are reversed.
[C62.37–1996]

REVERSE-BLOCKING DIODE THYRISTOR SPD
A two-terminal thyristor SPD that exhibits a blocking state for positive cathode voltage.
[C62.37–1996]

REVERSE-BLOCKING TRIODE THYRISTOR SPD
A three-terminal thyristor SPD that exhibits a blocking state for positive cathode voltage.
[C62.37–1996]

ROUTINE TESTS
Tests made by the manufacturer on every device or representative samples, or on parts or materials, as required, to verify that the product meets the design specifications.
[C62.1–1989 & C62.11–1987]
A test made for quality control by the manufacturer on every device, on representative samples, or on parts or materials as required to verify during production that the product meets the design specifications.
[STD 32–1990]